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  sd101a th u r sd101c small signal schottky diodes features mechanical data for general purpose applications the sd101 series is a metal-on-silicon junction schottky barrier device which is protected by a pn junction guard ring. the low forward voltage drop and fast switching make it ideal for protection of mos devices, steering, biasing, and coupling diodes for fast switching and low logic level applications. these diodes are also available in the minimelf case with the type designation ll101a to ll101c. do-35 dimensions in inches and (millimeters) 0.150(3.8) max 1.083(27.5) min 1.083(27.5) min 0.079(2.0) max dia 0.020(0.52) max dia case : do-35 glass case polarity : color band denotes cathode end w eight : approx. 0.05 gram absolute ratings(limiting values) electrical characteristics reverse breakover voltage at i r =10 m a leakage current at v r =50v v r =40v v r =30v forward voltage drop at i f =1ma (ratings at 25 c ambient temperature unless otherwise specified) 200 200 200 2.0 2.1 2.2 0.41 0.4 0.39 1 1 0.95 0.9 i f =15ma reverse recovery time at i f =i r =5ma,recover to 0.1 i r thermal resistance,junction to ambient junction capacitance at v r =0v ,f=1mhz v rrm v r v r v r v rrm v rrm mw a v v t stg p tot t j power dissipation (infinite heat sink) peak reverse v oltage storage t emperature range junction temperature maximum single cycle surge 10 m s square wave -55 to+150 c c v v v v v v v v v na na na pf pf pf ns k/w i fsm v f v f v f v f v f v f i r i r i r c j c j c j r q ja t rr 125 2.0 400 300 1) 1) 60 60 50 50 40 40 1) v alid provided that leads at a distance of 4mm from case are kept at ambient temperature 1) v alid provided that leads at a distance of 4mm from case are kept at ambient temperature symbols units v alue min. t yp. max. unis symbols sd101a s d 1 0 1 b sd101c sd101a sd101b sd101c sd101a sd101b sd101c sd101a sd101b sd101c sd101a sd101b sd101c sd101a sd101b sd101c high temperature soldering guaranteed : 260 !/ 10 seconds at terminals xinghe electronics e?o?? gaomi xinghe electronicsco.,ltd. www.sddzg.com tel:0536-2210359 qq:464768017 1
2 figure 1. typical variation of fwd.current vs.fwd. voltage for primary conduction through the schottky barrier figure 2. typical forward conduction curve of combination schottky barrier and pn junction guard ring figure 4. typical capacitance curve as a function of reverse voltage 0 0 0.01 0.01 2 2 2 2 2 2 2 5 5 5 5 5 5 5 0.1 0.1 1 1 10 10 100 20 40 60 80 0.5 0.5 1v 1v 100 2 ma ma pf v f v r v r v f i f i r c j i f a b c a a b b c c 0 0 1 10 10 20 20 30 30 40 40 50v 50v ? a 25 c 50 c 75 c 100 c 125 c 150 c figure 3.typical variation of reverse current at various temperatures sd101a th u r sd101c small signal schottky diodes xinghe electronics e?o?? gaomi xinghe electronicsco.,ltd. www.sddzg.com tel:0536-2210359 qq:464768017


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